We present a symmetry-based calculation of the electronic structure of a compound semiconductor quantum dot (QD) in the sp^3s* tight-binding model including the spin-orbit interaction. The Hamiltonian matrix is diagonalized exactly for CdTe QD sizes up to 60 {\AA}. The surface dangling bonds are passivated by hydrogen through a careful analysis of the density of states and wave functions. The calculated size dependence of the energy gap shows a reasonable agreement with the available experimental data. Our symmetry analysis indicates that, in contrast with a reported prediction of the three-band effective-mass model, the fundamental interband transition remains dipole-allowed in CdTe nanocrystals.
@article{arxiv.cond-mat/9902118,
title = {Electronic structure of CdTe nanocrystals: A tight-binding study},
author = {J. Perez-Conde and A. K. Bhattacharjee},
journal= {arXiv preprint arXiv:cond-mat/9902118},
year = {2009}
}
Comments
9 pages, 5 eps figures, to be published in Solid State Comm