The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit coupling effect and nonreciprocal transport, which makes its suitable for spintronic devices with broad applications in logic and storage fields. However, the complex heterojunction interfaces of InSb/CdTe, composed of group III-V and group II-VI semiconductors, are prone to interdiffusion. Therefore, characterization and study of the interfacial properties of InSb/CdTe heterojunctions are crucial for the growth improvement of the InSb/CdTe material system as well as its application in the field of spintronics. In this study, a novel scanning probe microscope, called a scanning noise microscope, was applied to visualize hot electron scattering in InSb/CdTe nano-devices. The results demonstrated that the near-field signal originates from the Coulomb scattering of charged ions on electrons at the interface of the embedded layer heterojunction. This real-space, nondestructive characterization of the heterojunction interface properties offers a new tool for enhancing the performance of heterojunctions.
@article{arxiv.2501.05208,
title = {Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface},
author = {Xiaoxiao Ma and Zhenghang Zhi and Weijie Deng and Tianxin Li and Qianchun Weng and Xufeng Kou and Wei Lu},
journal= {arXiv preprint arXiv:2501.05208},
year = {2025}
}