We propose atomic films of n-doped γ-InSe as a platform for intersubband optics in the infrared (IR) and far infrared (FIR) range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) of the InSe film these transitions span from ∼0.7 eV for bilayer to ∼0.05 eV for 15-layer InSe. We use a hybrid k⋅p theory and tight-binding model, fully parametrized using density functional theory, to predict their oscillator strengths and thermal linewidths at room temperature.
@article{arxiv.1801.07052,
title = {Hybrid $\mathbf{k\cdot p}$-tight-binding model for intersubband optics in atomically thin InSe films},
author = {Samuel J. Magorrian and Adrian Ceferino and Viktor Zólyomi and Vladimir I. Fal'ko},
journal= {arXiv preprint arXiv:1801.07052},
year = {2018}
}