We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100∘C to 350∘C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ωcm2 for samples bonded at 200∘C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at one sun or low concentration conditions.
@article{arxiv.1505.05453,
title = {III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers},
author = {Adele C. Tamboli and Maikel F. A. M. van Hest and Myles A. Steiner and Stephanie Essig and Emmett E. Perl and Andrew G. Norman and Nick Bosco and Paul Stradins},
journal= {arXiv preprint arXiv:1505.05453},
year = {2015}
}