Related papers: Hybrid $\mathbf{k\cdot p}$-tight-binding model for…
We present a density functional theory parametrized hybrid k$\cdot$p tight binding model for electronic properties of atomically thin films of transition-metal dichalcogenides, 2H-$MX_2$ ($M$=Mo, W; $X$=S, Se). We use this model to analyze…
We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with…
Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic…
Few-layer InSe draws tremendous research interests owing to the superior electronic and optical properties. It exhibits high carrier mobility up to more than 1000 cm2/Vs at room temperature. The strongly layer-tunable band gap spans a large…
Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform…
Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer…
The effects of annealing and variation of temperature on the electrical and thermoelectric properties of e-beam evaporated InSe thin films has been investigated in details. The XRD study demonstrates that the as-deposited InSe thin films…
Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…
III-V colloidal quantum dots are widely studied for their applications as detectors and emitters from visible to short-wave infrared. They might also be used in the mid-infrared if they can be stably n-doped to access their intraband…
We present the intrinsic optical properties over a broad spectral range of TiN thin films deposited on a Si/SiO$_2$ substrate. We analyze the measured reflectivity spectra of the film-substrate multilayer structure within a well-establish…
We have developed the tight-binding theory to study electronic and optical properties of type-II heterostructures CA/C'A' grown from the zinc-blende semiconductors CA and C'A' along the crystallographic direction [001]. The sp^3s*…
Due to the strong quantum confinement effect, few-layer {\gamma}-InSe exhibits a layer-dependent bandgap, spanning the visible and near infrared regions, and thus recently draws tremendous attention. As a two-dimensional material, the…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
A new approach was proposed to accurately determine the thickness of film, especially for ultra-thin film, through spectrum fitting with the assistance of interference layer. The determination limit can reach even less than 1 nm. Its…
We use apertureless scattering near-field optical microscopy (SNOM) to investigate the nanoscale optical response of vanadium dioxide (VO2) thin films through a temperature-induced insulator-to-metal transition (IMT). We compare images of…
We developed an ultra-compact high-resolution imaging system for cold atoms. Its only in-vacuum element is a multimode optical fiber with a diameter of $230\,\mu$m, which simultaneously collects light and guides it out of the vacuum…
We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical…
We report optical absorption and photoluminescence spectra of Au, Fe, Co and Ni polycrystalline nanofilms in the UV-Vis-NIR range, featuring discrete bands resulting from transverse quantum confinement. The film thickness ranged from 1.1 to…
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their…
Measuring temperature fields in semi-transparent media requires the knowledge of material thermo-optic properties. While the current techniques are well established for isothermal thin films, they remain unexplored for thick media where…