50nm thick nanogranular polycrystalline dysprosium thin films have been prepared via ultra-high vacuum DC sputtering on SiO2 and Si wafers. The maximum in-plane spontaneous magnetization at T = 4K was found to be MS4K = 3.28T for samples deposited on wafers heated to 350C with a Neel point of TN = 173K and a ferromagnetic transition at TC = 80K, measured via zero field cooled field cooled magnetization measurements, close to single crystal values. The slightly reduced magnetization is explained in the light of a metastable face centered cubic crystal phase which occurred at the seed interface and granularity related effects, that are still noticeably influential despite an in-plane magnetic easy axis. As deposited samples showed reduced magnetization of MS4K = 2.26T, however their ferromagnetic transition shifted to a much higher temperature of TC = 172K and the antiferromagnetic phase was completely suppressed probably as a result of strain.
@article{arxiv.1301.1212,
title = {Improved magnetization in sputtered dysprosium thin films},
author = {G. Scheunert and W. R. Hendren and A. A. Lapicki and R. Hardeman and M. Gubbins and R. M. Bowman},
journal= {arXiv preprint arXiv:1301.1212},
year = {2015}
}