English

Grain boundary ferromagnetism in vanadium-doped In$_2$O$_3$ thin films

Materials Science 2015-06-17 v1

Abstract

Room temperature ferromagnetism was observed in In2_2O3thinfilmsdopedwith5at._3 thin films doped with 5 at.% vanadium, prepared by pulsed laser deposition at substrate temperatures ranging from 300 to 600 \,^{\circ}{\rm C}.XrayabsorptionfinestructuremeasurementindicatedthatvanadiumwassubstitutionallydissolvedintheIn. X-ray absorption fine structure measurement indicated that vanadium was substitutionally dissolved in the In_2OO_3$ host lattice, thus excluding the existence of secondary phases of vanadium compounds. Magnetic measurements based on SQUID magnetometry and magnetic circular dichroism confirm that the magnetism is at grain boundaries and also in the grains. The overall magnetization originates from the competing effects between grains and grain boundaries.

Keywords

Cite

@article{arxiv.1308.6492,
  title  = {Grain boundary ferromagnetism in vanadium-doped In$_2$O$_3$ thin films},
  author = {Qi Feng and Harry J Blythe and A Mark Fox and Xiu-Fang Qin and Xiao-Hong Xu and Steve M Heald and Gillian A Gehring},
  journal= {arXiv preprint arXiv:1308.6492},
  year   = {2015}
}

Comments

12 pages, 7 figures, 1 table, accepted by Europhysics Letters