HVPE growth of corundum-structured $\alpha$-Ga$_2$O$_3$ on sapphire substrates with $\alpha$-Cr$_2$O$_3$ buffer layer

S. I. Stepanov; V. I. Nikolaev; A. V. Almaev; A. I. Pechnikov; M. P. Scheglov; A. V. Chikiryaka; B. O. Kushnarev

HVPE growth of corundum-structured $\alpha$-Ga$_2$O$_3$ on sapphire substrates with $\alpha$-Cr$_2$O$_3$ buffer layer

Applied Physics 2021-06-21 v1 Materials Science

Authors: S. I. Stepanov , V. I. Nikolaev , A. V. Almaev , A. I. Pechnikov , M. P. Scheglov , A. V. Chikiryaka , B. O. Kushnarev

View on arXiv ↗ PDF ↗

Abstract

Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without $\alpha$ -Cr $_2$ O $_3$ buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of $\alpha$ -Ga $_2$ O $_3$ and $\epsilon$ -Ga $_2$ O $_3$ phases with a dislocation density of about $2\cdot10^{10}$ cm $^{-2}$ . The insertion of $\alpha$ -Ga $_2$ O $_3$ buffer layers resulted in phase-pure $\alpha$ -Ga $_2$ O $_3$ films and a fourfold reduction of the dislocation density to $5 \cdot 10^9$ cm $^{-2}$ .

Keywords

hvpe alpha-ga2o3 sapphire substrates alpha-cr2o3 buffer dislocation density

Cite

@article{arxiv.2106.09583,
  title  = {HVPE growth of corundum-structured $\alpha$-Ga$_2$O$_3$ on sapphire substrates with $\alpha$-Cr$_2$O$_3$ buffer layer},
  author = {S. I. Stepanov and V. I. Nikolaev and A. V. Almaev and A. I. Pechnikov and M. P. Scheglov and A. V. Chikiryaka and B. O. Kushnarev},
  journal= {arXiv preprint arXiv:2106.09583},
  year   = {2021}
}

Comments

7 pages, 1 figure

Related papers

View all related →