English

High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch

Mesoscale and Nanoscale Physics 2024-08-16 v1 Materials Science

Abstract

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. Here we show wide resistance plateaus in kink states - a manifestation of the quantum valley Hall effect in Bernal bilayer graphene - quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 Kelvin and is flat within a dc bias window of tens of mV. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Keywords

Cite

@article{arxiv.2408.07804,
  title  = {High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch},
  author = {Ke Huang and Hailong Fu and Kenji Watanabe and Takashi Taniguchi and Jun Zhu},
  journal= {arXiv preprint arXiv:2408.07804},
  year   = {2024}
}

Comments

21 pages, 5 main figures, with Supplementary Materials

R2 v1 2026-06-28T18:13:14.524Z