Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting parameters thus obtained are then used as input in a modified MS model for nanowires to calculate wire resistivities. Predicted experimental resistivities agreed within about 10%. The results further indicate that grain boundary scattering was the dominant scattering mechanism in scaled Ru interconnects.
Cite
@article{arxiv.1712.03859,
title = {Finite Size Effects in Highly Scaled Ruthenium Interconnects},
author = {Shibesh Dutta and Kristof Moors and Michiel Vandemaele and Christoph Adelmann},
journal= {arXiv preprint arXiv:1712.03859},
year = {2018}
}