Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology
Mesoscale and Nanoscale Physics
2009-11-30 v2 Materials Science
Abstract
Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their barrier layers, in this case Ta. We also present a semiclassical model to predict the technological impact of this scattering and find that a barrier layer can significantly decrease conductivity, consistent with previously published measurements.
Keywords
Cite
@article{arxiv.0907.2999,
title = {Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology},
author = {Baruch Feldman and Scott T. Dunham},
journal= {arXiv preprint arXiv:0907.2999},
year = {2009}
}
Comments
To appear in Appl. Phys. Lett., Nov. 2009. Replaced with version accepted for publication, clarifies discussion of semiclassical model. Conclusions unchanged