Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K

Yosuke Goto; Joe Kajitani; Yoshikazu Mizuguchi; Yoichi Kamihara; Masanori Matoba

doi:10.7566/JPSJ.84.085003

Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K

Superconductivity 2018-08-15 v3

Authors: Yosuke Goto , Joe Kajitani , Yoshikazu Mizuguchi , Yoichi Kamihara , Masanori Matoba

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Abstract

We demonstrate the electrical and thermal transport of layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to those of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to heavier atomic mass of Eu ions.

Keywords

EuBiS2F layered bismuth-chalcogenide electrical transport thermal transport lattice thermal conductivity carrier transport hybridization

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@article{arxiv.1506.07340,
  title  = {Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K},
  author = {Yosuke Goto and Joe Kajitani and Yoshikazu Mizuguchi and Yoichi Kamihara and Masanori Matoba},
  journal= {arXiv preprint arXiv:1506.07340},
  year   = {2018}
}

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9 pages, 2 figures

Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K

Abstract

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