We present a detailed study of thermal and electrical transport behavior of single crystal Titanium disulphide flakes, which belongs to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85 - 285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T^2 dependence of resistivity in the range of 10 - 300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T^2 to T^5 beyond 200 K. Interestingly, Au ion-irradiated TiS2 samples showed a similar T 5 dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro- Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS2 crystals.
@article{arxiv.1801.04677,
title = {A study of electron and thermal transport in layered Titanium disulphide single crystals},
author = {Dhavala Suri and Vantari Siva and Shalikram Joshi and Kartik Senapati and P. K. Sahoo and Shikha Varma and R. S. Patel},
journal= {arXiv preprint arXiv:1801.04677},
year = {2018}
}