Single crystals of intermetallic Re3Ge7 were grown and characterized by measuring magnetization, electrical resistivity, Hall coefficient, and specific heat. Magnetization measurements show the material is weakly diamagnetic. A phase transition is indicated by a kink in magnetic susceptibility at Tc=58.5K and is confirmed by a λ-like anomaly in specific heat. In zero-field, the temperature dependence of electrical resistivity ρ(T) follows a typical metallic behavior above Tc and sharply increases below Tc, showing a metal-to-insulator-like transition. When a magnetic field is applied, strong effects on the transport properties are observed. The temperature dependence of magnetoresistivity Δρ = ρ(T,H) - ρ(T,H=0) develops a maximum around 30 K, deviating from ordinary metallic behavior. Analysis of the Hall coefficient measurements indicates that the carrier density is 0.04 per formula unit at 300 K and drops by two orders of magnitude below Tc. The effective mass of charge carriers is inferred from the analysis of the Shubnikov-de Haas quantum oscillations to be close to the bare electron mass.
@article{arxiv.2206.02943,
title = {Anomalous Transport Properties of Re$_3$Ge$_7$},
author = {Anja Rabus and Eundeok Mun},
journal= {arXiv preprint arXiv:2206.02943},
year = {2022}
}