We have studied U_3Si_2 by means of the heat capacity, electrical resistivity, Seebeck and Hall effects, and thermal conductivity in the temperature range 2-300 K and in magnetic fields up to 9 T. All the results obtained point to delocalized nature of 5f-electrons in this material. The low temperature heat capacity is enhanced (gamma_el ~ 150 mJ/mol-K2) and shows an upturn in Cp/T (T), characteristic of spin fluctuations. The thermal conductivity of U3Si2 is ~8.5 W/m-K at room temperature and we show that the electronic part dominates heat transport above 300 K as expected for a metallic system, although the lattice contribution cannot be completely neglected.
@article{arxiv.1807.01757,
title = {Thermal and transport properties of U3Si2},
author = {Daniel J. Antonio and Keshav Shrestha and Jason M. Harp and Cynthia A. Adkins and Yongfeng Zhang and Jon Carmack and Krzysztof Gofryk},
journal= {arXiv preprint arXiv:1807.01757},
year = {2018}
}