English

Doping-induced magnetism in the semiconducting B20 compound RuGe

Materials Science 2018-03-16 v1

Abstract

RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagnetic semimetal, are both isostructural to the Kondo insulator FeSi and the skyrmion lattice host MnSi. Here, we have explored the magnetic and transport properties of Co-doped RuGe: Ru1x_{1-x}Cox_xGe. For small values of xx, a magnetic ground state emerges with TcT_{c}\approx 5 - 9 K, which is accompanied by a moderate decrease in electrical resistivity and a Seebeck coefficient that indicates electron-like charge carriers. The magnetization, magnetoresistance, and the specific heat capacity all resemble that of Fe1x_{1-x}Cox_xSi for similar Co substitution levels, suggesting that Ru1x_{1-x}Cox_xGe hosts equally as interesting magnetic and charge carrier transport properties.

Keywords

Cite

@article{arxiv.1803.05585,
  title  = {Doping-induced magnetism in the semiconducting B20 compound RuGe},
  author = {Mojammel A. Khan and D. P. Young and P. W. Adams and D. Browne and D. M. Gautreau and W. Adam Phelan and Huibo Cao and J. F. DiTusa},
  journal= {arXiv preprint arXiv:1803.05585},
  year   = {2018}
}

Comments

10 pages, 10 figures