Magnetic ground state of Rh-doped Kondo semiconductor CeRu2Al10 [Ce(Ru1−xRhx)2Al10] is investigated by muon-spin relaxation method. Muon-spin precession with two frequencies is observed in the x = 0 sample, while only one frequency is present in the x = 0.05 and 0.1 samples, which is attributed to the broad static field distribution at the muon site. The internal field at the muon site is enhanced from about 180 G in x = 0 sample to about 800 G in the Rh-doped samples, supporting the spin-flop transition as suggested by macroscopic measurements, and the boundary of different magnetic ground states is identified around x = 0.03. The drastic change of magnetic ground state by a small amount of Rh-doping (3%) indicates that the magnetic structure in CeRu2Al10 is not robust and can be easily tuned by external perturbations such as electron doping. The anomalous temperature dependence of internal field in CeRu2Al10 is suggested to be attributed to the hyperfine interaction between muons and conduction electrons.
@article{arxiv.1308.3285,
title = {Magnetic instability induced by Rh-doping in Kondo semiconductor CeRu$_2$Al$_{10}$},
author = {Hanjie Guo and Hiroshi Tanida and Riki Kobayashi and Ikuto Kawasaki and Masafumi Sera and Takashi Nishioka and Masahiro Matsumura and Isao Watanabe and Zhu-an Xu},
journal= {arXiv preprint arXiv:1308.3285},
year = {2013}
}