We study the electronic structure of the recently discovered diluted magnetic semiconductor Ga1−xCrxN (x = 0.01-0.10). A systematic study of the changes in the occupied and unoccupied ligand (N) partial density of states (DOS) of the host lattice is carried out using N 1s soft x-ray emission and absorption spectroscopy, respectively. X-ray absorption measurements confirm the wurtzite N 2p DOS and substitutional doping of Cr into Ga-sites. Coupled changes in the occupied and unoccupied N 2p character DOS of Ga1−xCrxN identify states responsible for ferromagnetism consistent with band structure calculations.
@article{arxiv.cond-mat/0409769,
title = {Doping Dependent Changes in Nitrogen 2$p$ States in the Diluted Magnetic Semiconductor Ga$_{1-x}$Cr$_{x}$N},
author = {T. Takeuchi and Y. Harada and T. Tokushima and M. Taguchi and Y. Takata and A. Chainani and J. J. Kim and H. Makino and T. Yao and T. Yamamoto and T. Tsukamoto and S. Shin and K. Kobayashi},
journal= {arXiv preprint arXiv:cond-mat/0409769},
year = {2009}
}