Direct measurements of the fractional quantum Hall effect gaps

V. S. Khrapai; A. A. Shashkin; M. G. Trokina; V. T. Dolgopolov; V. Pellegrini; F. Beltram; G. Biasiol; L. Sorba

doi:10.1103/PhysRevLett.99.086802

Direct measurements of the fractional quantum Hall effect gaps

Strongly Correlated Electrons 2007-09-03 v1

Authors: V. S. Khrapai , A. A. Shashkin , M. G. Trokina , V. T. Dolgopolov , V. Pellegrini , F. Beltram , G. Biasiol , L. Sorba

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Abstract

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.

Keywords

fractional quantum Hall effect energy gap chemical potential GaAs/AlGaAs spin polarization Landau level

Cite

@article{arxiv.cond-mat/0702390,
  title  = {Direct measurements of the fractional quantum Hall effect gaps},
  author = {V. S. Khrapai and A. A. Shashkin and M. G. Trokina and V. T. Dolgopolov and V. Pellegrini and F. Beltram and G. Biasiol and L. Sorba},
  journal= {arXiv preprint arXiv:cond-mat/0702390},
  year   = {2007}
}

Direct measurements of the fractional quantum Hall effect gaps

Abstract

Keywords

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