Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

V. V. Vanovsky; V. S. Khrapai; A. A. Shashkin; V. Pellegrini; L. Sorba; G. Biasiol

doi:10.1103/PhysRevB.87.081306

Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

Mesoscale and Nanoscale Physics 2013-02-15 v2 Strongly Correlated Electrons

Authors: V. V. Vanovsky , V. S. Khrapai , A. A. Shashkin , V. Pellegrini , L. Sorba , G. Biasiol

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Abstract

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters.

Keywords

fractional quantum hall effect spin transition magnetocapacitance wave function extent gaas/algaa heterojunctions filling factor

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@article{arxiv.1210.0387,
  title  = {Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function},
  author = {V. V. Vanovsky and V. S. Khrapai and A. A. Shashkin and V. Pellegrini and L. Sorba and G. Biasiol},
  journal= {arXiv preprint arXiv:1210.0387},
  year   = {2013}
}

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Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

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