Related papers: Direct measurements of the fractional quantum Hall…
We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu = 1/3 and nu = 2/5 fractional gaps in two-dimensional (2D) electron system in GaAs/AlGaAs single heterojunctions. In high…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
Fractional quantum Hall effect energy gaps have been measured in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is varied by applying hydrostatic pressure up to 20 kbar. The gap at v=1/3 decreases with pressure until the…
The average electron spin-polarization $\cal P$ of two-dimensional electron gas confined in $\rm GaAs/GaAlAs$ multiple quantum-wells was measured by nuclear magnetic resonance (NMR) near the fractional quantum Hall state with filling factor…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
The residual interaction between composite fermions (CFs) can express itself through higher order fractional Hall effect. With the help of diagonalization in a truncated composite fermion basis of low-energy many-body states, we predict…
The activation gap Delta of the fractional quantum Hall state at constant filling n =1/3 is measured in wide range of perpendicular magnetic field B. Despite the full spin polarization of the incompressible ground state, we observe a sharp…
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…
We study the interaction-enhanced spin gaps in the two-dimensional electron gas confined in GaAs/AlGaAs single heterojunctions subjected to weak magnetic fields. The values are obtained from the chemical potential jumps measured by…
We consider the effect of contact interaction in a prototypical quantum spin Hall system of pseudo-spin-1/2 particles. A strong effective magnetic field with opposite directions for the two spin states restricts two-dimensional particle…
Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
The dependence of the activated gap on magnetic field is studied for the fractional filling factor~1/3. By comparing the experimental results with results from exact diagonalization calculations we are able to identify the excitation of a…
The fractional quantum Hall (FQH) effect arises from strong electron correlations in a quantising magnetic field, and features exotic emergent phenomena such as electron fractionalisation. Using the diagrammatic Monte Carlo approach with…
When a gas of electrons is confined to two dimensions, application of a strong magnetic field may lead to startling phenomena such as emergence of electron pairing. According to a theory this manifests itself as appearance of the fractional…
We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings \nu=8/3 and 7/3 in a series of high quality quantum wells. In the density range…
The fractional quantum Hall effect is observed at low field, in a regime where the cyclotron energy is smaller than the Coulomb interaction. The nu=5/2 excitation gap is measured to be 262+/-15 mK at ~2.6 T, in good agreement with previous…
We show the low-lying excitations at filling factor $\nu=n+1/3$ with realistic interactions are contained completely within the well-defined Hilbert space of "Gaffnian quasiholes". Each Laughlin quasihole can thus be understood as a bound…
Tunneling measurements on 2D electron gases at high magnetic field reveal a qualitative difference between the two spin sublevels of the lowest Landau level. While the tunneling current-voltage characteristic at filling factor $\nu = 1/2$…
We compute energy gaps for spin-polarized fractional quantum Hall states in the lowest Landau level at filling fractions nu=1/3, 2/5,3/7 and 4/9 using exact diagonalization of systems with up to 16 particles and extrapolation to the…