Defect states and disorder in charge transport in semiconductor nanowires
Mesoscale and Nanoscale Physics
2011-06-23 v1 Materials Science
Abstract
We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices.
Keywords
Cite
@article{arxiv.1106.4492,
title = {Defect states and disorder in charge transport in semiconductor nanowires},
author = {Dongkyun Ko and X. W. Zhao and Kongara M. Reddy and O. D. Restrepo and R. Mishra and I. S. Beloborodov and Nandini Trivedi and Nitin P. Padture and W. Windl and F. Y. Yang and E. Johnston-Halperin},
journal= {arXiv preprint arXiv:1106.4492},
year = {2011}
}
Comments
Main Text is 16 pages with 4 figures, Supplemental Materials is additional 6 pages with 1 figure