Anisotropic Carrier Transport in n-Doped 6H-SiC
Materials Science
2021-10-05 v1
Abstract
In this paper, a study is presented on the charge transport in n-type doped semiconductor 6H-SiC (in both transient and steady state) using a nonequilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the electric field (applied in the orientation perpendicular or parallel to the c-axis) of the basic macrovariables: the electron drift velocity and the nonequilibrium temperature. The peak points in time evolution of this macrovariables are derived and analyzed.
Keywords
Cite
@article{arxiv.2110.00801,
title = {Anisotropic Carrier Transport in n-Doped 6H-SiC},
author = {Ricardo Tadeu Ferracioli and Clóves Gonçalves Rodrigues and Roberto Luzzi},
journal= {arXiv preprint arXiv:2110.00801},
year = {2021}
}
Comments
arXiv admin note: substantial text overlap with arXiv:2109.05382