Anisotropic Hole Drift Velocity in 4H-SiC
Materials Science
2021-10-06 v1
Abstract
A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system. The hole drift velocity and the nonequilibrium temperature are obtained, and their dependence on the electric field strength is derived and analyzed.
Keywords
Cite
@article{arxiv.2110.01611,
title = {Anisotropic Hole Drift Velocity in 4H-SiC},
author = {Jackelinne L. Vasconcelos and Clóves Gonçalves Rodrigues and Roberto Luzzi},
journal= {arXiv preprint arXiv:2110.01611},
year = {2021}
}
Comments
arXiv admin note: substantial text overlap with arXiv:2110.00801; text overlap with arXiv:2109.05382