Related papers: Anisotropic Hole Drift Velocity in 4H-SiC
In this paper, a study is presented on the charge transport in n-type doped semiconductor 6H-SiC (in both transient and steady state) using a nonequilibrium quantum kinetic theory derived from the method of nonequilibrium statistical…
This communication presents a comparative study on the charge transport (in transient and steady state) in bulk n-type doped SiC-polytypes: 3C-SiC, 4H-SiC and 6H-SiC. The time evolution of the basic macrovariables: the electron drift…
The transport properties of hot holes in silicon at cryogenic temperatures exhibit several anomalous features, including the emergence of two distinct saturated drift velocity regimes and a non-monotonic trend of the current noise versus…
Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift…
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> orientation are presented. The measurements cover electric field values between 2.5…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
Recent theoretical results on transport in a two-dimensional disordered electron liquid with spin and isospin degrees of freedom are reviewed. A number of experimental features in temperature dependence of resistivity at low temperatures in…
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are presented. The measurements cover electric field values…
The parameter-free computation of charge transport properties of semiconductors is now routine owing to advances in the ab-initio description of the electron-phonon interaction. Many studies focus on the low-field regime in which the…
We develop a temperature dependent theory for singlet exciton hopping transport in disordered semiconductors. It draws on the transport level concept within a F\"orster transfer model and bridges the gap in describing the transition from…
Phase-resolved transient grating spectroscopy in semiconductor quantum wells has been shown to be a powerful technique for measuring the electron-hole drag resistivity $\rho_{eh}$, which depends on the Coulomb interaction between the…
We investigate hole transport in polymer light-emitting-diodes in which the emissive layer is made of liquid-crystalline polymer chains aligned perpendicular to the direction of transport. Calculations of the current as a function of time…
In this paper, we report a new type of instability of electron holes (EHs) interacting with passing ions. The nonlinear interaction of EHs and ions is investigated using a new theory of hole kinematics. It is shown that the oscillation in…
Variable range hopping transport has been investigated in amorphous YSi from 30 mK to 2 K as a function of the temperature T and electric field F. For F=0, where conduction is along sinuous paths (isotropic percolation), the conductance G…
Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2, nu=11/2, and nu=13/2 at low temperature. In stark contrast, the transport at nu=9/2 is isotropic for…
Many condensed matter experiments explore the finite temperature dynamics of systems near quantum critical points. Often, there are no well-defined quasiparticle excitations, and so quantum kinetic equations do not describe the transport…
This thesis investigates phenomena occurring in black-hole accretion discs which are likely to induce high-frequency quasi-periodic variability. Two classes of pseudo-relativistic theoretical models are studied. The first is based on the…
The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…
We study the in-plane resistivity anisotropy in the spin-glass phase of the high-$T_{c}$ cuprates, on the basis of holes moving in a spiral spin background. This picture follows from analysis of the extended $t-J$ model with Coulomb…
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…