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We study the thermopower of a disordered nanowire in the field effect transistor configuration. After a first paper devoted to the elastic coherent regime (Bosisio R., Fleury G. and Pichard J.-L. 2014 \textit{New J. Phys.} \textbf{16}…

Mesoscale and Nanoscale Physics · Physics 2014-09-23 Riccardo Bosisio , Cosimo Gorini , Geneviève Fleury , Jean-Louis Pichard

A systematic study of the transport energy in disordered organic semiconductors based on variable range hopping theory has been presented here. The temperature, electric field, material disorder and carrier concentration dependent transport…

Disordered Systems and Neural Networks · Physics 2012-11-21 Ling Li , Nianduan Lu , Ming Liu

We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…

Strongly Correlated Electrons · Physics 2010-03-01 Milos M. Radonjic , D. Tanaskovic , V. Dobrosavljevic , K. Haule

The thermoelectric efficiency of semiconductors is usually considered in the ohmic electronic transport regime, which is achieved through high doping. Here we consider the opposite regime of low doping where the current-voltage…

Materials Science · Physics 2012-10-01 François Léonard

A standard drift-diffusion model of space charge wave propagation in semiconductors has been studied numerically and analytically under dc voltage bias. For sufficiently long samples, appropriate contact resistivity and applied voltage -…

Condensed Matter · Physics 2009-10-31 I. R. Cantalapiedra , M. J. Bergmann , L. L. Bonilla , S. W. Teitsworth

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both…

Charge transport in disordered two-dimensional (2D) systems showcases a myriad of unique phenomenologies that highlight different aspects of the underlying quantum dynamics. Electrons in such systems undergo a crossover from ballistic…

Mesoscale and Nanoscale Physics · Physics 2025-11-18 H. P. Veiga , S. M. João , J. M. Alendouro Pinho , J. P. Santos Pires , J. M. Viana Parente Lopes

Motivated by a recent breakthrough transport experiment [Phys. Rev. B.107.245423 (2023)] in Majorana nanowires, we theoretically investigate local and nonlocal transport in Majorana nanowires in various disorder regimes, correlating the…

Mesoscale and Nanoscale Physics · Physics 2023-08-16 Sankar Das Sarma , Haining Pan

Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first…

Mesoscale and Nanoscale Physics · Physics 2014-05-01 Riccardo Bosisio , Geneviève Fleury , Jean-Louis Pichard

In this paper, a study is presented on the charge transport in n-type doped semiconductor 6H-SiC (in both transient and steady state) using a nonequilibrium quantum kinetic theory derived from the method of nonequilibrium statistical…

Materials Science · Physics 2021-10-05 Ricardo Tadeu Ferracioli , Clóves Gonçalves Rodrigues , Roberto Luzzi

Overcoming the detrimental effect of disorder at the nanoscale is very hard since disorder induces localization and an exponential suppression of transport efficiency. Here we unveil novel and robust quantum transport regimes achievable in…

We study the conductance of chaotic or disordered wires in a situation where equilibrium transport decomposes into biased diffusion and a counter-moving regular current. A possible realization is a semiconductor nanostructure with…

Chaotic Dynamics · Physics 2007-05-23 Manamohan Prusty , Holger Schanz

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal…

We examine the charge transport through disordered arrays of metallic dots using numerical simulations. We find power law scaling in the current-voltage curves for arrays containing no voids, while for void-filled arrays charge bottlenecks…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 C. Reichhardt , C. J. Olson Reichhardt

Understanding the charge carrier transport in the disordered organic molecular semiconductors is a fascinating and still unresolved problem in modern condensed-matter physics, yet has an extremely important bearing on their application in…

Materials Science · Physics 2007-05-23 Ajit Kumar Mahapatro , Subhasis Ghosh

Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying…

We study electron transport through a domain wall in a ferromagnetic nanowire subject to spin-dependent scattering. A scattering matrix formalism is developed to address both coherent and incoherent transport properties. The coherent case…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Peter E. Falloon , Rodolfo A. Jalabert , Dietmar Weinmann , Robert L. Stamps

We investigate the non-equilibrium transport properties of a disordered molecular nanowire. The nanowire is regarded as a quasi-one-dimensional organic crystal composed of self-assembled molecules. One orbital and a single random energy are…

Mesoscale and Nanoscale Physics · Physics 2017-06-07 P. Thiessen , E. Diaz , R. A. Roemer , F. Dominguez-Adame

While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with…

Applied Physics · Physics 2020-12-02 Jason A. Röhr , Roderick C. I. MacKenzie

We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band…

Mesoscale and Nanoscale Physics · Physics 2011-06-07 Martin P. Persson , Hector Mera , Yann-Michel Niquet , Christophe Delerue , Mamadou Diarra
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