Confinement engineering of s-d exchange interactions in GaMnAs quantum wells

N. P. Stern; R. C. Myers; M. Poggio; A. C. Gossard; D. D. Awschalom

doi:10.1103/PhysRevB.75.045329

Confinement engineering of s-d exchange interactions in GaMnAs quantum wells

Mesoscale and Nanoscale Physics 2007-10-23 v1 Materials Science

Authors: N. P. Stern , R. C. Myers , M. Poggio , A. C. Gossard , D. D. Awschalom

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Abstract

Recent measurements of coherent electron spin dynamics reveal an antiferromagnetic s-d exchange coupling between conduction band electrons and electrons localized on Mn{2+} impurities in GaMnAs quantum wells. Here we discuss systematic measurements of the s-d exchange interaction in GaMnAs/AlGaAs quantum wells with different confinement potentials using time-resolved Kerr rotation. Extending previous investigations of the dependence of the s-d exchange, N{0}alpha, on well width, we find that its magnitude also depends on well depth. Both phenomena reduce to a general dependence on confinement energy, described by a band-mixing model of confinement-induced kinetic exchange in the conduction band.

Keywords

s-d exchange interaction GaMnAs quantum wells confinement potential Kerr rotation band mixing kinetic exchange

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@article{arxiv.cond-mat/0604576,
  title  = {Confinement engineering of s-d exchange interactions in GaMnAs quantum wells},
  author = {N. P. Stern and R. C. Myers and M. Poggio and A. C. Gossard and D. D. Awschalom},
  journal= {arXiv preprint arXiv:cond-mat/0604576},
  year   = {2007}
}

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4 pages, 5 figures

Confinement engineering of s-d exchange interactions in GaMnAs quantum wells

Abstract

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