Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight binding model combined with the irreducible representations of the group theory. The results are compared with those of Si and Ge quantum dots with spherical shape. The effects of the shapes on electronic states in QDs are discussed.
@article{arxiv.cond-mat/0208395,
title = {Calculations on Electronic States in QDs woth Saturated Shapes},
author = {Wei Cheng and Shang-Fen Ren},
journal= {arXiv preprint arXiv:cond-mat/0208395},
year = {2007}
}