Electrical manipulation of an electronic two-state system in Ge/Si quantum dots
Mesoscale and Nanoscale Physics
2015-05-14 v1 Materials Science
Abstract
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the individual dot's electronic ground state between apex and base.
Cite
@article{arxiv.0909.4357,
title = {Electrical manipulation of an electronic two-state system in Ge/Si quantum dots},
author = {C. E. Pryor and M. E. Flatté and J. Levy},
journal= {arXiv preprint arXiv:0909.4357},
year = {2015}
}