Ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multi-valley materials like n-doped Si. Here we calculate numerically the spectrum of a two-electron Si quantum dot and show that the dot with the lateral size of several nm can have the spin triplet ground state which is impossible in the single-valley materials. Predicted singlet-triplet level crossing in two-electron Si quantum dots can potentially establish the platform for quantum simulation of magnetic many body systems based on quantum dots. We suggest several examples of such systems that open a way to controlled quantum simulations within the condensed matter setting.
@article{arxiv.1908.02543,
title = {Prediction of the spin triplet two-electron quantum dots in Si: towards controlled quantum simulations of magnetic systems},
author = {D. Miserev and O. P. Sushkov},
journal= {arXiv preprint arXiv:1908.02543},
year = {2019}
}