The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties. Furthermore, from mean field calculations (local-spin-density and Hartree-Fock) we find that even two electrons could form a bound state in these dots.
@article{arxiv.cond-mat/0311077,
title = {Quantum dots based on spin properties of semiconductor heterostructures},
author = {M. Valin-Rodriguez and A. Puente and L. Serra},
journal= {arXiv preprint arXiv:cond-mat/0311077},
year = {2009}
}
Comments
9 pages, 3 figures. Accepted in PRB (Brief Report) (2004)