In this chapter, by using ab-initio molecular dynamics, we introduce the latest simulation results on two materials for flash memory devices: Ge2Sb2Te5 and Ge-Se-Cu-Ag. This chapter is a review of our previous work including some of our published figures and text in Cai et al. (2010) and Prasai & Drabold (2011) and also includes several new results.
Cite
@article{arxiv.1103.6051,
title = {Atomistic Simulations of Flash Memory Materials Based on Chalcogenide Glasses},
author = {Bin Cai and Binay Prasai and D. A. Drabold},
journal= {arXiv preprint arXiv:1103.6051},
year = {2011}
}
Comments
24 pages, 20 figures. This is a chapter submitted for the book under the working title "Flash Memory" (to be published by Intech ISBN 978-953-307-272-2)