In this paper, we discuss the atomistic structure of two conducting bridge computer memory materials, including Cu-doped alumina and silver-doped GeSe3. We show that the Ag is rather uniformly distributed through the chalcogenide glass, whereas the Cu strongly clusters in the alumina material. The copper-oxide system conducts via extended state conduction through Cu atoms once the concentration becomes high enough to form connected Cu channels. What is more, the addition of Cu leads to extended states throughout the large alumina (host) optical gap. By contrast, Ag in the selenide host is not strongly conducting even if one imposes a very narrow nanowire geometry. All of these results are discussed using novel techniques for computing the conduction active parts of the network.
@article{arxiv.1901.04324,
title = {Electronic conduction mechanisms in GeSe$_3$:Ag and Al$_2$O$_3$:Cu},
author = {K. N. Subedi and Kiran Prasai and D. A. Drabold},
journal= {arXiv preprint arXiv:1901.04324},
year = {2019}
}