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Analysis of integrated single-electron memory operation

Mesoscale and Nanoscale Physics 2009-11-07 v1
Authors: Alexander N. Korotkov
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Abstract

Various aspects of single-electron memory are discussed. In particular, we analyze the single-electron charging by Fowler-Nordheim tunneling, propose the idea of background charge compensation, and discuss the defect-tolerant architecture based on nanofuses.

Cite

@article{arxiv.cond-mat/0206016,
  title  = {Analysis of integrated single-electron memory operation},
  author = {Alexander N. Korotkov},
  journal= {arXiv preprint arXiv:cond-mat/0206016},
  year   = {2009}
}

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6 pages

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