Alternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon

J. Schumacher; J. C. Martinez; F. Martin; M. Maier; H. Adrian; R. Raiteri; H. J. Butt

Alternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon

Materials Science 2007-05-23 v1

Authors: J. Schumacher , J. C. Martinez , F. Martin , M. Maier , H. Adrian , R. Raiteri , H. J. Butt

Abstract

In this work we investigate the influence of the use of YSZ and CeO2/YSZ as insulators for Metal- Ferroelectric-Insulator-Semiconductor (MFIS) structures made with SrBi2Ta2O9 (SBT). We show that by using YSZ only the a-axis oriented Pyrochlore phase could be obtained. On the other hand the use of a CeO2/YSZ double-buffer layer gave a c-axis oriented SBT with no amorphous SiO2 inter- diffusion layer. The characteristics of MFIS diodes were greatly improved by the use of the double buffer. Using the same deposition conditions the memory window could be increased from 0.3 V to 0.9 V. From the piezoelectric response, nano-meter scale ferroelectric domains could be clearly identified in SBT thin films.

Keywords

SrBi2Ta2O9 buffer layer YSZ CeO2 MFIS structure ferroelectric pyrochlore phase memory window

Cite

@article{arxiv.cond-mat/0003356,
  title  = {Alternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon},
  author = {J. Schumacher and J. C. Martinez and F. Martin and M. Maier and H. Adrian and R. Raiteri and H. J. Butt},
  journal= {arXiv preprint arXiv:cond-mat/0003356},
  year   = {2007}
}

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5 pages, 9 figures, 13 referneces

Alternative Buffer-Layers for the Growth of SrBi2Ta2O9 on Silicon

Abstract

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