YMnO3 thin films have been grown on n - type Si substrates by nebulized spray pyrolysis in the Metal - Ferroelectric - Semiconductor (MFS) configuration. The C-V characteristics of the film in MFS structure exhibit hysteretic behavior consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of interface states decreases with the increase in the annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current measured in the accumulation region, is lower in well-crystallized thin films and obeys a space- charge limited conduction mechanism.
@article{arxiv.cond-mat/0301286,
title = {Ferroelectric YMnO3 films deposited on n-type Si (111) substrates},
author = {S. Parashar and A. R. Raju P. Victor and S. B. Krupanidhi and C. N. R. Rao},
journal= {arXiv preprint arXiv:cond-mat/0301286},
year = {2007}
}
Comments
10 pages, 1 table, 4 figures, first submitted to Appl. Phys. Letts. on 28th Aug 2002. Resubmitted to J. Phys. D; applied physics on 26th Dec 2002