Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy
Abstract
Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expectations. For multi-Te configurations the results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon.
Keywords
Cite
@article{arxiv.2303.13368,
title = {Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy},
author = {Moritz Hoesch and Olena Fedchenko and Mao Wang and Christoph Schlueter and Dmitrii Potorochin and Katerina Medjanik and Sergey Babenkov and Anca S. Ciobanu and Aimo Winkelmann and Hans-Joachim Elmers and Shengqiang Zhou and Manfred Helm and Gerd Schönhense},
journal= {arXiv preprint arXiv:2303.13368},
year = {2023}
}
Comments
5 pages, 4 figures