N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics.
@article{arxiv.1809.06055,
title = {Breaking the doping limit in silicon by deep impurities},
author = {Mao Wang and A. Debernardi and Y. Berencén and R. Heller and Chi Xu and Ye Yuan and Yufang Xie and R. Böttger and L. Rebohle and W. Skorupa and M. Helm and S. Prucnal and Shengqiang Zhou},
journal= {arXiv preprint arXiv:1809.06055},
year = {2019}
}