A self-aligned nano-fabrication process for vertical NbN-MgO-NbN Josephson junctions

A. Grimm; S. Jebari; D. Hazra; F. Blanchet; F. Gustavo; J. -L. Thomassin; M. Hofheinz

doi:10.1088/1361-6668/aa8007

A self-aligned nano-fabrication process for vertical NbN-MgO-NbN Josephson junctions

Mesoscale and Nanoscale Physics 2017-09-19 v1 Superconductivity

Authors: A. Grimm , S. Jebari , D. Hazra , F. Blanchet , F. Gustavo , J. -L. Thomassin , M. Hofheinz

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We present a new process for fabricating vertical NbN-MgO-NbN Josephson junctions using self-aligned silicon nitride spacers. It allows for a wide range of junction areas from 0.02 um^2 to several 100 um^2. At the same time, it is suited for the implementation of complex microwave circuits with transmission line impedances ranging from < 1 Ohm to > 1 kOhm. The constituent thin films and the finished junctions are characterized. The latter are shown to have high gap voltages (> 4 mV) and low sub-gap leakage currents.

Keywords

Josephson junctions NbN-MgO-NbN self-aligned process nano-fabrication microwave circuits gap voltage sub-gap leakage

Cite

@article{arxiv.1705.05608,
  title  = {A self-aligned nano-fabrication process for vertical NbN-MgO-NbN Josephson junctions},
  author = {A. Grimm and S. Jebari and D. Hazra and F. Blanchet and F. Gustavo and J. -L. Thomassin and M. Hofheinz},
  journal= {arXiv preprint arXiv:1705.05608},
  year   = {2017}
}

Comments

5 pages, 3 figures, 3 tables

A self-aligned nano-fabrication process for vertical NbN-MgO-NbN Josephson junctions

Abstract

Keywords

Cite

Comments

Related papers