Josephson effects in MgB2 meta masked ion damage junctions

D. -J. Kang; N. H. Peng; R. Webb; C. Jeynes; J. H. Yun; S. H. Moon; D. Oh; G. Burnell; E. J. Tarte; D. F. Moore; M. G. Blamire

doi:10.1109/TASC.2003.814157

Josephson effects in MgB2 meta masked ion damage junctions

Superconductivity 2018-07-04 v1

Authors: D. -J. Kang , N. H. Peng , R. Webb , C. Jeynes , J. H. Yun , S. H. Moon , D. Oh , G. Burnell , E. J. Tarte , D. F. Moore , M. G. Blamire

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Abstract

Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB $_{2}$ with T $_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB $_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.

Keywords

josephson junctions josephson junctions and superconducting circuits radiation damage in silicon

Cite

@article{arxiv.cond-mat/0206207,
  title  = {Josephson effects in MgB2 meta masked ion damage junctions},
  author = {D. -J. Kang and N. H. Peng and R. Webb and C. Jeynes and J. H. Yun and S. H. Moon and D. Oh and G. Burnell and E. J. Tarte and D. F. Moore and M. G. Blamire},
  journal= {arXiv preprint arXiv:cond-mat/0206207},
  year   = {2018}
}

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12 pages, 4 figures, RevTeX4, submitted to APL

Josephson effects in MgB2 meta masked ion damage junctions

Abstract

Keywords

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