Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature.
@article{arxiv.2304.03721,
title = {A new FDSOI spin qubit platform with 40nm effective control pitch},
author = {T. Bédécarrats and B. Cardoso Paz and B. Martinez Diaz and H. Niebojewski and B. Bertrand1 and N. Rambal and C. Comboroure and A. Sarrazin and F. Boulard and E. Guyez and J. -M. Hartmann and Y. Morand and A. Magalhaes-Lucas and E. Nowak and E. Catapano and M. Cassé and M. Urdampilleta and Y. -M. Niquet and F. Gaillard and S. De Franceschi and T. Meunier and M. Vinet},
journal= {arXiv preprint arXiv:2304.03721},
year = {2023}
}