相关论文: A proposal for a new type of thin-film field-emiss…
Electrons in the mono-layer atomic sheet of graphene have a long coherence length of the order of micrometers. We will show that this coherence is transmitted into the vacuum via electric field assisted electron emission from the graphene…
The electronic structure of thin films of FeTe grown on Bi$_2$Te$_3$ is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk…
In this paper we report a semianalytical model of the mass transfer impedance in microfluidic electrochemical chips (MEC). It is based on the molar advection diffusion equation in a microfluidic channel with a Poiseuille flow and an…
Crack-template-based transparent conductive films (TCFs) are promising kinds of junction-free, metallic network electrodes that can be used, e.g., for transparent electromagnetic interference (EMI) shielding. Using image processing of…
A novel photonic thermal diode concept operating in the near field and capitalizing on the temperature-dependence of coupled surface polariton modes in nanostructures is proposed. The diode concept utilizes terminals made of the same…
Near-field thermophotovoltaic systems functioning at 400$\sim$900~K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb $p$-$n$ junctions are investigated theoretically. The performances of two near-field systems…
Supercurrent field-effect transistors made from thin metallic films are a promising option for next-generation high-performance computation platforms. Despite extensive research, there is still no complete quantitative microscopic…
By the first-principles electronic structure calculations, we have studied electronic structures of FeSe monolayer and bilayer thin films on SrTiO$_3$ (001) with SrO-termination or TiO$_2$ termination. We find that both FeSe monolayer and…
We show that the electric polarization at the interface with ultrathin superconducting (S) films sandwiched between ferroelectric (FE) layers allows achievement of substantially stronger modulation of inner carrier density and…
Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by…
The growing market for sensors, internet of things, and wearable devices is fueling the development of low-cost energy-harvesting materials and systems. Film based thermoelectric (TE) devices offer the ability to address the energy…
The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric…
By partitioning the electron density into subsystem contributions, the Frozen Density Embedding (FDE) formulation of subsystem DFT has recently emerged as a powerful tool for reducing the computational scaling of Kohn--Sham DFT. To date,…
This paper introduces an accurate edge-based smoothed finite element method (ES-FEM) for electromagnetic analysis for both two dimensional cylindrical and three dimensional cartesian systems, which shows much better performance in terms of…
Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…
Plasmon resonance in metals represents the collective oscillation of the free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes the plasmonic…
Field electron emission from an ultrathin multilayer planar cold cathode (UMPC) including quantum well structure has been both experimentally and theoretically investigated. We found that only tuning the energy levels of UMPC the field…
Knowledge of atomic-level details of structure, chemistry, and electronic states is paramount for a comprehensive understanding of emergent properties at oxide interfaces. We utilise a novel methodology based on atomic-scale electron energy…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…