相关论文: Spin Relaxation Resonances Due to the Spin-Axis In…

We present calculations of spin-relaxation rates of alkali-metal atoms due to the spin-axis interaction acting in binary collisions between the atoms. We show that for the high-temperature conditions of interest here, the spin relaxation…

Interactions of electron spins with rotational degrees of freedom during collisions or with external fields are fundamental processes that limit the coherence time of spin gases. We experimentally study the decoherence of hot cesium spins…

Long-range quantum communication for spin qubits is an important open problem. Here we study decoherence of an electron spin qubit that is being transported in a moving quantum dot. We focus on spin decoherence due to spin-orbit interaction…

We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…

Spin noise sets fundamental limits to the precision of measurements using spin-polarized atomic vapors, such as performed with sensitive atomic magnetometers. Spin squeezing offers the possibility to extend the measurement precision beyond…

We study spin relaxation in a two-electron quantum dot in the vicinity of the singlet-triplet crossing. The spin relaxation occurs due to a combined effect of the spin-orbit, Zeeman, and electron-phonon interactions. The singlet-triplet…

The D'yakonov-Perel' spin relaxation induced by the spin-orbit interaction is examined in disordered two-dimensional electron gas. It is shown that, because of the electron-electron interactions different spin relaxation rates can be…

We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise. In particular, we clarify how the presence of conduction-band valleys influences spin relaxation. In single-valley semiconductor quantum dots,…

We estimate the triplet-singlet relaxation rate due to spin-orbit coupling assisted by phonon emission in weakly-confined quantum dots. Our results for two and four electrons show that the different triplet-singlet relaxation trends…

We consider the problem of spin relaxation in a two-dimensional electron gas (2DEG) in a perpendicular magnetic field. We assume that the spin relaxation is induced by the Rashba spin-orbit (SO) interaction, which appears due to the…

Relaxation of electronic spins in metals is significantly enhanced whenever a Fermi surface crosses Brillouin zone boundaries, special symmetry points, or lines of accidental degeneracy. A realistic calculation shows that if aluminum had…

Relaxation of the Larmor magnetic moment by spin-exchange collisions has been shown to diminish for high alkali densities, resulting from the linear part of the collisional interaction. In contrast, we demonstrate both experimentally and…

Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate…

Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency…

Spin relaxation torque ${\cal T}$ in uniform metallic ferromagnets with the spin-orbit interaction arising from random impurities is calculated microscopically. ${\cal T}$ is shown to be written by spatial derivatives of the electric field,…

A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…

We discuss the rate of relaxation of the total spin in the two-electron droplet in the vicinity of the magnetic field driven singlet-triplet transition. The total spin relaxation is attributed to spin-orbit and electron-phonon interactions.…

Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…

We calculate electron and nuclear spin relaxation rates in a quantum dot due to the combined action of Nyquist noise and electron-nuclei hyperfine or spin-orbit interactions. The relaxation rate is linear in the resistance of the gate…

Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling…