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相关论文: Surface metal-insulator transition in the Hubbard …

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A three band model containing the essential physics of transition metal oxides with partially filled t_2g shells is solved in the single-site dynamical mean field approximation, using the full rotationally invariant Slater-Kanamori…

强关联电子 · 物理学 2009-03-30 Philipp Werner , Emanuel Gull , Andrew J. Millis

Recently, a surface superconductor-insulator transition has been predicted for a bulk superconductor in an electric field applied perpendicular to its surface. The related calculations were performed within a one-dimensional Hubbard model…

超导电性 · 物理学 2023-12-18 Yajiang Chen , Quanyong Zhu , Ming Zhang , Xiaobing Luo , A. A. Shanenko

By means of exact diagonalizations, the Bernevig-Hughes-Zhang model at quarter-filling in the limit of strong Hubbard on-site repulsion is investigated. We find that the non-interacting metallic state will be turned into a Chern insulator…

强关联电子 · 物理学 2025-04-09 Yu-Chin Tzeng , Po-Yao Chang , Min-Fong Yang

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…

强关联电子 · 物理学 2018-03-01 Tetsuya Furukawa , Kazuhiko Kobashi , Yosuke Kurosaki , Kazuya Miyagawa , Kazushi Kanoda

We investigate the Mott transition in the Kagom\'e lattice Hubbard model using a cluster extension of dynamical mean field theory. The calculation of the double occupancy, the density of states, the static and dynamical spin correlation…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Norio Kawakami , Hirokazu Tsunetsugu

In the present paper we propose a doubly orbitally degenerate narrow-band model with correlated hopping. The peculiarity of the model is taking into account the matrix element of electron-electron interaction which describes intersite…

强关联电子 · 物理学 2009-10-31 L. Didukh , Yu. Skorenkyy , Yu. Dovhopyaty , V. Hankevych

We study the Mott transition in a frustrated Hubbard model with next-nearest neighbor hopping at half-filling. The interplay between interaction, dimensionality and geometric frustration closes the one-dimensional Mott gap and gives rise to…

强关联电子 · 物理学 2012-09-19 Marcin Raczkowski , Fakher F. Assaad

The Mott-Hubbard metal-insulator transition is one of the most important problems in correlated electron systems. In the past decade, much progress has been made on examining a particle-hole symmetric form of the transition in the Hubbard…

强关联电子 · 物理学 2009-11-10 D. O. Demchenko , A. V. Joura , J. K. Freericks

High-resolution angle-resolved photoemission (ARPES) data show that a metal-insulator Mott transition occurs at the surface of the quasi-two dimensional compound TaSe$_2$. The transition is driven by the narrowing of the Ta $5d$ band…

强关联电子 · 物理学 2009-11-07 L. Perfetti , A. Georges , S. Florens , S. Biermann , S. Mitrovic , Y. Tomm , H. Höchst , M. Grioni

Within the framework of a mean-field approach the Mott-Hubbard phase transition is considered in the Hubbard and Falicov-Kimball models for half-filled occupation. It is shown that a static Z_2-field forms an insulator state on the lattice…

强关联电子 · 物理学 2022-05-25 Igor N. Karnaukhov

We describe the behavior of a system of fermionic atoms loaded in a bipartite one-dimensional optical lattice that is under the action of an external time-periodic driving force. By using Floquet theory, an effective model with renormalized…

量子气体 · 物理学 2014-09-05 M. Di Liberto , D. Malpetti , G. I. Japaridze , C. Morais Smith

The magnetic properties and Mott transition of the Hubbard model on the square lattice with frustration are studied at half-filling and zero temperature by the variational cluster approximation. When the on-site repulsion $U$ is large,…

强关联电子 · 物理学 2015-06-15 A. Yamada , K. Seki , R. Eder , Y. Ohta

We study the quantum phase transition from an insulator to a metal realized at t'=t'_c > 0.5t in the ground state of the half-filled Hubbard chain with both nearest-neighbor (t) and next-nearest-neighbor (t') hopping. The study is carried…

强关联电子 · 物理学 2007-05-23 G. I. Japaridze , R. M. Noack , D. Baeriswyl

We investigate the Hubbard model on the anisotropic triangular lattice as a suggested effective description of the Mott phase in various triangular organic compounds. Employing the variational cluster approximation and the ladder…

强关联电子 · 物理学 2015-10-13 Manuel Laubach , Ronny Thomale , Christian Platt , Werner Hanke , Gang Li

We apply the approximate analytic methods to the investigation of the band structure of the asymmetric Hubbard model where the chemical potentials and electron transfer parameters depend on the electron spin (type of quasiparticles). The…

强关联电子 · 物理学 2009-11-11 Ihor V. Stasyuk , Orest B. Hera

The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…

材料科学 · 物理学 2007-05-23 P. P. Boriskov , A. L. Pergament , A. A. Velichko , G. B. Stefanovich , N. A. Kuldin

We apply the density-matrix renormalization group (DMRG) method to a one-dimensional Hubbard model that lacks Umklapp scattering and thus provides an ideal case to study the Mott-Hubbard transition analytically and numerically. The model…

强关联电子 · 物理学 2021-12-22 Florian Gebhard , Örs Legeza

We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

无序系统与神经网络 · 物理学 2015-06-24 George Kastrinakis

We employ dynamical mean field theory (DMFT) with a Quantum Monte Carlo (QMC) atomic solver to investigate the finite temperature Mott transition in the Hubbard model with the nearest neighbor hopping on a triangular lattice at…

强关联电子 · 物理学 2009-11-11 K. Aryanpour , W. E. Pickett , R. T. Scalettar
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