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We analyze the operation of the wireless single-electron logic family based on single-electron-parametron cells. Parameter margins, energy dissipation, and the error probability are calculated using the orthodox theory of single-electron…

介观与纳米尺度物理 · 物理学 2009-10-31 A. N. Korotkov , K. K. Likharev

Quantum limits of power dissipation in spintronic computing are estimated. A computing element composed of a single electron in a quantum dot is considered. Dynamics of its spin due to external magnetic field and interaction with adjacent…

介观与纳米尺度物理 · 物理学 2007-05-23 Dmitri E. Nikonov , George I. Bourianoff , Paolo Gargini

A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…

量子物理 · 物理学 2009-10-30 A. M. Bychkov , L. A. Openov , I. A. Semenihin

Quantum technologies involving qubit measurements based on electronic interferometers rely critically on accurate single-particle emission. However, achieving precisely timed operations requires exquisite control of the single-particle…

介观与纳米尺度物理 · 物理学 2021-01-08 Fredrik Brange , Adrian Schmidt , Johannes C. Bayer , Timo Wagner , Christian Flindt , Rolf J. Haug

Champions of spintronics often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional charge based electronic devices. Yet, not a single spintronic device exists…

介观与纳米尺度物理 · 物理学 2012-10-16 Supriyo Bandyopadhyay

The electronic distribution in devices with sufficiently small diemnsions may not be in thermal equilibrium with their surroundings. Systems where the occupancies of electronic states are solely determined by tunneling processes are…

介观与纳米尺度物理 · 物理学 2016-08-17 N. García , F. Guinea

Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping…

介观与纳米尺度物理 · 物理学 2007-05-23 P. König , J. Könemann , T. Schmidt , E. McCann , V. I. Fal'ko , R. J. Haug

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…

量子物理 · 物理学 2015-03-19 K. W. Chan , M. Mottonen , A. Kemppinen , N. S. Lai , K. Y. Tan , W. H. Lim , A. S. Dzurak

We apply the general procedure presented by Jarzynski in [1] to the problem of dissipation in a voltage-driven single-electron box. We obtain the expression of dissipated work, and find its relation to the dissipation Q obtained in [2]. We…

介观与纳米尺度物理 · 物理学 2015-06-04 J. P. Pekola , O. -P. Saira

In this paper we discuss the electronic kinetic energy in the ground state of the Holstein Hamiltonian in one space dimension using the Global-Local variational method together with perturbation theory at weak and strong coupling. The…

凝聚态物理 · 物理学 2007-05-23 A. H. Romero , David W. Brown , Katja Lindenberg

By means of time-resolved Kerr spectroscopy experiments we relate the energy dissipation processes on the femtosecond (electron-spin relaxation time $\tau_{el-sp}$) and nanosecond timescale (Gilbert relaxation $\tau_{\alpha}$) and compare…

其他凝聚态物理 · 物理学 2008-04-08 J. Walowski , G. Müller , M. Djordjevic , M. Münzenberg , M. Kläui , C. A. F. Vaz , J. A. C. Bland

In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…

介观与纳米尺度物理 · 物理学 2010-12-07 Chuan-Yu Lin , Wei-Min Zhang

We proposed in an earlier paper [arXiv:1108.6141] an empirical formula of the electrical conductivity which agrees with experiments within 20 percent for the most of pure elemental metals at room temperature ranges. This is obtained, in…

统计力学 · 物理学 2011-09-28 Tadashi Hirayama

Power dissipation in switching devices is believed to be the single most important roadblock to the continued down scaling of electronic circuits. There is a lot of experimental effort at this time to implement switching circuits based on…

介观与纳米尺度物理 · 物理学 2009-07-24 Behtash Behin-Aein , Sayeef Salahuddin , Supriyo Datta

The majority of experimental realizations of single-electron sources rely on the periodic manipulation of the tunnel junctions through their gate voltages, and thus require a high level of control over the system. To circumvent the…

介观与纳米尺度物理 · 物理学 2022-07-08 Christopher W. Wächtler , Javier Cerrillo

This paper proposes a universal microscopic model for the shallow confinement regime of single-electron tunneling devices. We consider particle escape from a quantum well generically emerging as a bifurcation in a smooth electrostatic…

介观与纳米尺度物理 · 物理学 2025-04-11 Austris Akmentinsh , Niels Ubbelohde , Vyacheslavs Kashcheyevs

The ability to emit and control single electrons in a dynamical manner enables their use in electron quantum optics and sensing. To characterize the electron states emitted with energy far above the Fermi energy, a dynamic barrier has been…

介观与纳米尺度物理 · 物理学 2025-11-24 Wanki Park , Chanuk Yang , Young-Seok Ghee , Hyung Kook Choi , Bum-Kyu Kim , Myung-Ho Bae

Variance-based logic (VBL) uses the fluctuations or the variance in the state of a particle or a physical quantity to represent different logic levels. In this letter we show that compared to the traditional bi-stable logic representation…

新兴技术 · 计算机科学 2017-07-21 Sri Harsha Kondapalli , Xuan Zhang , Shantanu Chakrabartty

We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system (NEMS) to SET…

介观与纳米尺度物理 · 物理学 2012-05-10 Marc Ganzhorn , Wolfgang Wernsdorfer

Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining…

介观与纳米尺度物理 · 物理学 2021-05-26 Imtiaz Ahmed , Anasua Chatterjee , Sylvain Barraud , John J. L. Morton , James A. Haigh , M. Fernando Gonzalez-Zalba
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