相关论文: Spin transport through a single self-assembled InA…

Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been found to present excellent tunneling magnetoresistance (TMR) property, which has great potential applications in field sensing, non-volatile magnetic…

We consider quantum transport and tunneling magnetoresistance (TMR) through an interacting quantum dot in the Coulomb blockade regime, attached to ferromagnetic leads. We show that there exist two kinds of anomalies of TMR, which have…

A correct general formula for the spin current through an interacting quantum dot coupled to ferromagnetic leads with magnetization at an arbitrary angle $\theta$ is derived within the framework of the Keldysh formalism. Under asymmetric…

The spin-polarized transport through two-level quantum dots weakly coupled to ferromagnetic leads is considered theoretically in the Coulomb blockade regime. It is assumed that the dot is doubly occupied, so that the current flows due to…

The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal…

The discovery of spin torque transfer (STT) has lead to a significant advance in the development of spintronic devices. Novel structures and materials have been studied in order to improve the performance of the magnetic tunnel junctions…

Magnetic phase transition tunnel magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show that the MPT-TMR of FeRh/MgO/Cu tunnel junction can be as…

We investigate the noise in spin transport through a single quantum dot (QD) tunnel coupled to ferromagnetic electrodes with noncollinear magnetizations. Based on a spin-resolved quantum master equation, auto- and cross-correlations of…

The recent proposal of altermagnetism has drawn widespread attention to antiferromagnet (AFM) exhibiting spin splitting, extending beyond the realm of sign-alternating spin splitting in momentum space protected solely by rotational…

Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel…

We show that engineering of tunnel barriers forming at the interfaces of a one-dimensional spin valve provides a viable path to a strong gate-voltage tunability of the magnetoresistance effect. In particular, we investigate theoretically a…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional…

In this work we investigate the spin-dependent transport through a double quantum dot embedded in a ferromagnetic tunnel junction and side attached to a topological superconducting nanowire hosting Majorana zero-energy modes. We focus on…

As Moore's law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling…

We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and…

The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…

Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…

The spin-polarized transport through a coherent strongly coupled double quantum dot (DQD) system is analyzed theoretically in the sequential and cotunneling regimes. Using the real-time diagrammatic technique, we analyze the current,…

We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…