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相关论文: Tight-Binding model for semiconductor nanostructur…

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Correlated insulators and superconductivity have been observed in "magic-angle" twisted bilayer graphene, when the nearly flat bands close to neutrality are partially filled. While a momentum-space continuum model accurately describes these…

强关联电子 · 物理学 2019-06-04 Hoi Chun Po , Liujun Zou , T. Senthil , Ashvin Vishwanath

Quantum-mechanical (QM) simulations, thanks to their predictive power, can provide significant insights into the nature and dynamics of defects such as vacancies, dislocations and grain boundaries. These considerations are essential in the…

材料科学 · 物理学 2021-11-17 Bartosz Barzdajn , Alexander M Garrett , Thomas M Whiting , Christopher P Race

Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic…

介观与纳米尺度物理 · 物理学 2021-06-09 K. Moratis , J. Cibert , D. Ferrand , Y. -M. Niquet

Topological materials exhibit protected edge modes that have been proposed for applications in for example spintronics and quantum computation. While a number of such systems exist, it would be desirable to be able to test theoretical…

介观与纳米尺度物理 · 物理学 2018-10-15 Robert Drost , Teemu Ojanen , Ari Harju , Peter Liljeroth

We develop an atomistic, nearest-neighbor sp3s* tight-binding Hamiltonian to investigate the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model we calculate that the incorporation of dilute concentrations of Bi…

材料科学 · 物理学 2011-12-12 Muhammad Usman , Christopher A. Broderick , Andrew Lindsay , Eoin P. O'Reilly

A one-third monolayer of the heavy metals Sn and Pb deposited on semiconductor substrates can lead to a $\sqrt{3}\times\sqrt{3}$ surface reconstruction, constituting an exciting triangular lattice material platform. A long history of…

强关联电子 · 物理学 2025-03-14 Lucca Marchetti , Matthew Bunney , Domenico Di Sante , Stephan Rachel

A simple model based on the divide and conquer rule and tight-binding (TB) approximation is employed for studying the role of finite size effect on the electronic properties of elongated graphene nanoribbon (GNR) heterojunctions. In our…

介观与纳米尺度物理 · 物理学 2015-08-07 Benjamin O. Tayo

The formal link between the linear combination of atomic orbitals approach to density functional theory and two-center Slater-Koster tight-binding models is used to derive an orthogonal $d$-band tight-binding model for iron with only two…

材料科学 · 物理学 2015-03-19 Georg K. H. Madsen , Eunan J. McEniry , Ralf Drautz

Despite the wealth of experimental data on the Fe-pnictide compounds of the KFe2As2-type, K = Ba, Ca, or Sr, the main theoretical work based on multiorbital tight-binding models has been restricted so far to the study of the related 1111…

超导电性 · 物理学 2010-06-16 S. Graser , A. F. Kemper , T. A. Maier , H. -P. Cheng , P. J. Hirschfeld , D. J. Scalapino

Motivated by recent nuclear magnetic resonance (NMR) experiments, we present a microscopic sp3 tight-binding model calculation of the NMR shifts in bulk Bi2Se3, and Bi2Te3. We compute the contact, dipolar, orbital and core polarization…

介观与纳米尺度物理 · 物理学 2016-09-21 Samuel Boutin , Jorge Ramírez-Ruiz , Ion Garate

We propose a five-band tight-binding model for the Fe-As layers of iron pnictides with the hopping amplitudes calculated within the Slater-Koster framework. The band structure found in DFT, including the orbital content of the bands, is…

超导电性 · 物理学 2009-10-08 M. J. Calderon , B. Valenzuela , E. Bascones

We carry out both the tight-binding model and the $ab\ initio$ to study the layered silicene, the spin, valley, sublattice degrees of freedom are taken into consider and the effects of electric field, magnetic field, and even the light in…

材料科学 · 物理学 2018-04-06 Chen-Huan Wu

The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high…

介观与纳米尺度物理 · 物理学 2018-10-03 S. D. Liles , R. Li , C. H. Yang , F. E. Hudson , M. Veldhorst , A. S. Dzurak , A. R. Hamilton

The ability to selectively measure, initialize, and reuse qubits during a quantum circuit enables a mapping of the spatial structure of certain tensor-network states onto the dynamics of quantum circuits, thereby achieving dramatic resource…

This paper explores the potential for spin-triplet superconductivity in molecular beam epitaxy grown PbTe/SnTe semiconductor heterostructures. We present convincing evidence for spin-triplet pairing by soft point-contact spectroscopy…

A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters for zinc-blende (ZB) structures are used as an initial…

材料科学 · 物理学 2019-11-05 Fu-Chen Hsiao , Ching-Tarng Liang , Yia-Chung Chang , John M. Dallesasse

As a possible physical realization of a quantum information processor, a system with stacked self-assembled InAs quantum dots buried in GaAs in adjacent to the channel of a spin field-effect transistor has been proposed. In this system,…

介观与纳米尺度物理 · 物理学 2009-03-19 Kazuya Yuasa , Kosuke Okano , Hiromichi Nakazato , Saori Kashiwada , Kanji Yoh

We present here the quantum model of a Ni solid-state electron spin qubit on a silicon surface with the use of a density functional scheme for calculation of the exchange integrals in the non-collinear spin configurations in the generalized…

介观与纳米尺度物理 · 物理学 2015-12-09 Oleg V. Farberovich , Victoria L. Mazalova , Alexander V. Soldatov

We study the pairing symmetry and the topological properties of the hydrogen-doped ACr$_3$As$_3$ superconductors. Based on our first-principle band structure with spin-orbit-coupling (SOC), we construct tight binding model including the…

超导电性 · 物理学 2025-05-12 Juan-Juan Hao , Ming Zhang , Xian-Xin Wu , Fan Yang

In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained…