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We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…

介观与纳米尺度物理 · 物理学 2009-10-31 X. H. Wang , A. Brataas

We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the…

介观与纳米尺度物理 · 物理学 2007-05-23 A. Slobodskyy , C. Gould , T. Slobodskyy , G. Schmidt , L. W. Molenkamp , D. Sanchez

In highly resistive superconducting tunnel junctions, excess subgap current is usually observed and is often attributed to microscopic "pinholes" in the tunnel barrier. We have studied the subgap current in…

We resolve the breakdown of angular momentum conservation on two-dimensional photon tunneling by considering spin Hall effect (SHE) of light. This interesting effect manifests itself as polarization-dependent transverse shifts for a classic…

光学 · 物理学 2011-02-28 Hailu Luo , Shuangchun Wen , Weixing Shu , Dianyuan Fan

We consider the problem of electron transport in segregated conductor-insulator composites in which the conducting particles are connected to all others via tunneling conductances, thus forming a global tunnelingconnected resistor network.…

无序系统与神经网络 · 物理学 2012-01-23 B. Nigro , C. Grimaldi , P. Ryser

A new mechanism of tunnelling at macroscopic distances is proposed for a wave packet localized in one-dimensional disordered potential with mirror symmetry, V(-x)=V(x). Unlike quantum tunnelling through a regular potential barrier, which…

无序系统与神经网络 · 物理学 2012-05-15 E. Diez , F. Izrailev , A. A. Krokhin , A. Rodriguez

We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…

介观与纳米尺度物理 · 物理学 2017-02-01 Valla Fatemi , Quinn D. Gibson , Kenji Watanabe , Takashi Taniguchi , Robert J. Cava , Pablo Jarillo-Herrero

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data…

介观与纳米尺度物理 · 物理学 2015-05-13 A. Iovan , S. Andersson , Yu. G. Naidyuk , A. Vedyaev , B. Dieny , V. Korenivski

We observe a resonance in the conductance of silicon tunneling devices with a delta-doped barrier. The position of the resonance indicates that it arises from tunneling through the B^+ state of the boron atoms of the delta-layer. Since the…

凝聚态物理 · 物理学 2009-11-10 J. Caro , I. D. Vink , G. D. J. Smit , S. Rogge , T. M. Klapwijk

Phase-coherent diffusive transport through mesoscopic hybrid superconductor/normal metal tunneling structures is investigated. For a N-s-S two-barrier tunneling system with bulk S and N electrodes coupled by a mesoscopic superconducting…

超导电性 · 物理学 2009-09-25 A. V. Zaitsev , A. F. Volkov , S. W. D. Bailey , C. J. Lambert

We theoretically study transport properties of voltage-biased one-dimensional superconductor--normal metal--superconductor tunnel junctions with arbitrary junction transparency where the superconductors can have trivial or nontrivial…

介观与纳米尺度物理 · 物理学 2017-05-24 F. Setiawan , William S. Cole , Jay D. Sau , S. Das Sarma

Tunneling from a two-dimensional contact into quantum-Hall edges is considered theoretically for a case where the barrier is extended, uniform, and parallel to the edge. In contrast to previously realized tunneling geometries, details of…

介观与纳米尺度物理 · 物理学 2009-11-07 U. Zuelicke , E. Shimshoni , M. Governale

A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave…

介观与纳米尺度物理 · 物理学 2009-11-10 M. M. Glazov , P. S. Alekseev , M. A. Odnoblyudov , V. M. Chistyakov , S. A. Tarasenko , I. N. Yassievich

Tunneling is measured via the quantum levels of a metal nanoparticle. We analyze quantitatively the resonance energies, widths, and amplitudes, both in the regime where only one state is accessible for tunneling and in the non-equilibrium…

介观与纳米尺度物理 · 物理学 2009-11-07 Mandar M. Deshmukh , Edgar Bonet , A. N. Pasupathy , D. C. Ralph

The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…

凝聚态物理 · 物理学 2009-10-28 N. Turner , J. T. Nicholls , E. H. Linfield , K. M. Brown , G. A. C. Jones , D. A. Ritchie

We review recent work on resonant Andreev tunneling through a strongly interacting quantum dot connected to a normal and to a superconducting lead. We derive a general expression for the current flowing in the structure and discuss the…

介观与纳米尺度物理 · 物理学 2009-10-31 R. Raimondi , P. Schwab

We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and…

介观与纳米尺度物理 · 物理学 2013-06-11 H. O. H. Churchill , V. Fatemi , K. Grove-Rasmussen , M. T. Deng , P. Caroff , H. Q. Xu , C. M. Marcus

The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used…

Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag…

材料科学 · 物理学 2024-04-09 L. N. Jiang , B. Y. Chi , W. Z. Chen , X. F. Han

When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…

介观与纳米尺度物理 · 物理学 2016-09-21 Wei Chen , Manfred Sigrist , Dirk Manske