相关论文: Diode effect in magnetic tunnel junctions

The tunnel magnetoresistance (TMR) effect is one of the representative phenomena in spintronics. Ferromagnets, which have a net spin polarization, have been utilized for the TMR effect. Recently, by contrast, the TMR effect with…

We study how the formation of the Kondo compensation cloud influences the dynamical properties of a magnetic impurity that tunnels between two positions in a metal. The Kondo effect dynamically generates a strong tunneling…

Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of…

Tunneling conductance spectra between a normal metal / d-wave superconductor junction under the presence of bulk impurities in the superconductor are studied. The quasiclassical theory has been applied to calculate the spatial variation of…

We present a theoretical study of the transport properties of magnetic point contacts under bias. Our calculations are based on the Keldish's non-equilibrium Green's function formalism combined with a self-consistent empirical tight-binding…

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…

We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…

Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxial magnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances…

The role of impurities as experimental probes in the detection of quantum material properties is well appreciated. Here we study the effect of a single classical magnetic impurity in trapped ultracold Fermi superfluids. Depending on its…

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…

Direct tunneling in ferromagnetic junctions is compared with impurity-assisted, surface state assisted, and inelastic contributions to a tunneling magnetoresistance (TMR). Theoretically calculated direct tunneling in iron group systems…

Changes: figures added in postscript form, Eq. (7) and various typos corrected. We examine the effect of an impurity on the nearby tunneling conductance in an anisotropically-gapped superconductor. The variation of the conductance has…

We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition.…

A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo$|$vacuum$|$FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface…

We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the…

Magnetic phase transition tunnel magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show that the MPT-TMR of FeRh/MgO/Cu tunnel junction can be as…

Inspired by a recent experiment, we study the influence of thermal fluctuations on the $I$-$V$ characteristics of a Josephson junction, coupled to a strongly resistive environment. We obtain analytical results in the limit where the…

Asymmetric current--voltage ($I(V)$) curves, known as the diode or rectification effect, in one--dimensional electronic conductors can have their origin from scattering off a single asymmetric impurity in the system. We investigate this…

We study theoretically the current debatable issue about the effect of transition-metal (TM) substitution in iron-based superconductors through treating all of the TM ions as randomly distributed impurities. The extra electrons from TM…

The electric conductance of a strip of undoped graphene increases in the presence of a disorder potential, which is smooth on atomic scales. The phenomenon is attributed to impurity-assisted resonant tunneling of massless Dirac fermions.…