相关论文: Steps towards a capacitance standard based on sing…

We have fabricated a Cooper-pair transistor (CPT) with parameters such that for appropriate voltage biases, the sub-gap charge transport takes place via slow tunneling of quasiparticles that link two Josephson-coupled charge manifolds. In…

The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this…

We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the…

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at…

Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining…

We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…

Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable…

With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e,…

We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…

The mechanism of single-charge pumping using a dynamic quantum dot needs to be precisely understood for high-accuracy and universal operation toward applications to quantum current standards and quantum information devices. The type of…

Capacitance measurements are crucial for probing the electrical properties of materials. In this study, we develop and implement a capacitance measurement technique optimized for pulsed magnetic fields. Our approach employs an…

We report on the investigation of Al single electron structures equipped with miniature (8 um long) on-chip Cr resistors of R > R_k = h/e^2 = 25.8 kOhm. From the measurement of the Coulomb blockade in single-junction structures we evaluated…

Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon…

Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor…

The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study…

Nanoporous carbon-based supercapacitors store electricity through adsorption of ions from the electrolyte at the surface of the electrodes. Room temperature ionic liquids, which show the largest ion concentrations among organic liquid…

We demonstrate single-electron pumping in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots we move the system around charge triple points and transport exactly one electron…

A well-characterised sample of silicon tunable-barrier electron pump has been operated at a frequency of 2 GHz using a custom drive waveform, generating a pump current of 320 pA. Precision measurements of the current were made as a function…

In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…

A periodically driven quantum capacitor may function as an on-demand single electron source as it has recently been demonstrated experimentally. However, the accuracy at which single electrons are emitted is not yet understood. Here we…